Atomic Layer Deposition System

Atomic Layer Deposition System

Benefits of SENTECH ALD systems :
  • PEALD for sensitive substrates :
    The true remote plasma source enables homogenous and conformal coating of sensitive substrates and layers at low temperature <100°C. A high flux of reactive gas species is provided at the sample surface without UV radiation or ion bombardment.
  • PEALD for sensitive substrates :
    In situ diagnostic by the ALD Real Time Monitor enables ultra-high resolution of single ALD cycles. The advantages are confirmation of ALD regime, reduction of process time, and total cost of ownership. Spectroscopic ellipsometry, QCM and QMS are provided as in situ diagnostic, are advantages of our atomic layer depostion systems too.
  • Easy reactor cleaning :
    Regular reactor cleaning is essential for stable and repeatable atomic layer deposition processing. The reactor chamber is easily opened with the help of a lifting device for cleaning of our atomic layer deposition systems.
  • Glove box system integration :
    SENTECH atomic layer deposition systems are compatible with glove boxes of various suppliers.
  • Cluster integration :
    Atomic layer deposition systems are available as modules for SENTECH clusters. Our atomic layer deposition systems can be combined with SENTECH PECVD and etching systems for industrial application. Clusters optionally feature cassette-to-cassette loading.

SENTECH Atomic layer deposition systems enable thermal and plasma enhanced operation. The ALD systems can be configured for oxide, nitride, and metal deposition. 3D structures can be homogenously and conformally coated. With ALD, PECVD and ICPECVD, SENTECH offers plasma deposition technology for depositing films from the nanometer scale up to several microns.

SENTECH ALD systems allow the combination of different thermal and/or plasma enhanced ALD films to multilayer structures. Thermal and plasma enhanced atomic layer deposition is supported in one reactor with an optimal shutter.

SENTECH offers leading edge ultra-fast in-situ monitoring of layer-by-layer film growth using the ALD Real Time Monitor as well as wide range spectroscopic ellipsometry.

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