Park NX20
WBHTZ2K2
Brand: Park Systems
Category: Microscope - Atomic Force
Industry: Academia, Semiconductors, Material Science & Chemistry, Cement, Iron & Steel
The leading nanometrology tool for failure analysis and large sample research
| Application Images | Description | Scanning Conditions |
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Ge atom layer etching (ALE) on Patterned Wafer: The cross section of a Ge atom layer etching (ALE) patterned wafer was characterized using Scanning Spreading Resistance Microscopy (SSRM). The measurement clearly resolved the trench patterns, showing a peak-to-valley height (left) of 3.4 nm and a corresponding resistance (right) of 73 GΩ. | - System: NX20 - Sample: Germanium atom layer etching(ALE) on Patterned Wafer - Scan Mode: Scanning spread resistance microscopy (Channel: Height, Resistance) - Scan Rate: 1 Hz - Scan Size: 0.5 µm × 0.5 µm - Pixel Size: 118 nA, 73 GΩ |
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Li-ion Battery on Si substrate: A Li-ion Battery on Si substrate was measured in Scanning spread resistance microscopy to acquire spread resistance. The scan data revealed a peak-to-valley resistance difference of 51.7 GΩ, and the image shows various shape in battery. | - System: NX20 - Sample: Li-ion Battery on Si substrate - Scan Mode: Scanning spread resistance microscopy (Channel: Resistance) - Scan Rate: 0.2 Hz - Scan Size: 20 µm × 20 µm - Pixel Size: 512 × 512 pixels - Peak-to-valley: 51.7 GΩ |
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Ta/NiFe/Ta Pattern: A Ta/NiFe/Ta was measured in Magnetic Force Microscopy to acquire current image. The image shows the shape of a microman Ta/NiFe/Ta. |
- System: NX20 |
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CMP test key: A CMP test key was measured in True Non-contact mode to acquire the surface topography. The image shows the hexagonal pattern of the CMP test key. | - System: NX20 - Sample: CMP test key - Scan Mode: True Non-contact™ mode - Scan Rate: 0.6 Hz - Scan Size: 15 µm × 15 µm - Pixel Size: 512 × 256 pixels - Peak-to-valley: 239.4 nm |
