FTXWWGNY
Brand: Tescan
Category: Microscope - Scanning Electron
Industry: Life Science and Biotechnology, Semiconductors, Material Science & Chemistry
The TESCAN MIRA 4th Generation SEM represents the next evolution in analytical field emission electron microscopy — combining superior imaging performance, high-resolution analysis, and live elemental composition mapping within a single, intuitive TESCAN Essence™ software environment.
Powered by a FEG Schottky electron emission source, MIRA delivers outstanding brightness, stability, and low-noise imaging for nanometer-scale investigations.
Its integrated Essence™ EDS module, In-Flight Beam Tracing™, and Wide Field Optics™ make it the ultimate solution for demanding applications in materials characterization, failure analysis, and semiconductor inspection.
The TESCAN MIRA is engineered for professionals who demand uncompromising analytical power, image clarity, and workflow efficiency.
Featuring a high-brightness FEG Schottky electron source, the system achieves exceptional resolution and signal-to-noise performance, even at low accelerating voltages, making it ideal for surface-sensitive and nanostructured materials.
Through TESCAN Essence™ software, users gain unified access to SEM imaging and live EDS elemental analysis, simplifying the acquisition and correlation of both morphological and compositional data.
This seamless integration transforms the way laboratories conduct high-throughput inspections, enabling faster, more intuitive workflows without sacrificing analytical depth.
Advanced technologies like In-Flight Beam Tracing™ and Wide Field Optics™ ensure optimal beam alignment and effortless sample navigation.
Meanwhile, SingleVac™ mode supports imaging of beam-sensitive or non-conductive samples without compromising surface integrity.
Enhanced by optional in-column SE/BSE detectors and Beam Deceleration Technology, MIRA delivers remarkable imaging contrast, resolution, and analytical accuracy across diverse research and industrial environments.
In-Flight Beam Tracing™
Real-time modeling ensures optimum imaging and analytical conditions without manual aperture adjustment.
Wide Field Optics™
Enables ultra-wide sample navigation and region targeting down to ultra-low magnifications.
SingleVac™ Mode
Allows imaging of non-conductive and delicate samples under low-vacuum conditions, preventing charge accumulation.
Essence™ EDS Integration
Unified imaging and analysis interface for live, correlated morphological and elemental data.
Essence™ 3D Collision Model
Provides chamber visualization to protect detectors and samples during movement.
Beam Deceleration Technology (Optional)
Achieves enhanced surface sensitivity and contrast at lower accelerating voltages.
FEG Schottky Electron Source — Provides superior beam brightness, low energy spread, and exceptional image resolution.
Fully Integrated Essence™ EDS — Combines SEM imaging and elemental analysis in one unified software interface.
In-Flight Beam Tracing™ — Enables instant optimization of imaging and analytical parameters through a unique apertureless optical design.
Wide Field Optics™ — Navigate precisely at magnifications as low as 2× without needing an auxiliary optical camera.
SingleVac™ Mode — Perfect for observing charging or beam-sensitive samples safely.
Beam Deceleration Technology (Optional) — Enhances surface detail at low accelerating voltages for high-contrast imaging.
In-Column SE/BSE Detectors (Optional) — Provide flexible signal detection and improved topographic or compositional contrast.
Essence™ 3D Collision Model — Real-time chamber visualization ensures detector safety during stage motion.
Modular Analytical Platform — Supports optional detectors such as CL, water-cooled BSE, or Raman spectrometer for expanded analytical capabilities.
Precision at the Nanoscale. Performance Beyond Expectation.
The TESCAN MIRA 4th Generation Analytical SEM merges high-resolution FEG imaging, real-time EDS analysis, and advanced beam control technologies into a unified, intuitive platform.
With innovations like In-Flight Beam Tracing™, Wide Field Optics™, SingleVac™, and Beam Deceleration Technology, MIRA empowers researchers and engineers to achieve unrivaled imaging detail, faster workflows, and greater analytical depth — setting a new benchmark in field emission electron microscopy.
| Parameter | Specification |
|---|---|
| Technology Platform | Analytical Field Emission SEM |
| Electron Source | FEG Schottky Emission |
| Vacuum Modes | High Vacuum, SingleVac™ |
| Magnification Range | From 2× (Wide Field) to Nanometer Scale |
| Analytical Integration | Fully Integrated Essence™ EDS |
| Beam Control | In-Flight Beam Tracing™ Optical Design |
| Navigation | Wide Field Optics™ |
| Optional Modules | In-Column SE/BSE, Beam Deceleration, CL, Raman, Water-Cooled BSE |
| Safety System | Essence™ 3D Collision Model |
| Software Interface | Modular, Intuitive Essence™ GUI |
| Application Focus | Materials Research, QC, FA, Semiconductor Analysis |
Semiconductor and Electronics Inspection
Analyze microstructures, thin films, and interconnects with nanometer precision.
Materials Science & Nanotechnology
Investigate crystallographic phases, interfaces, and nanoscale features with superior contrast.
Quality Control (QC)
Perform fast, accurate defect and compositional analysis in manufacturing workflows.
Failure Analysis (FA)
Identify cracks, delaminations, or inclusions in advanced materials and devices.
Academic & Research Laboratories
An all-in-one analytical platform ideal for high-resolution imaging and teaching environments.
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