The Versatile Tool For Research And Prototyping With Variable Resolution And A Large Selection Of Modules For Easy Customization
The DWL 66+ laser lithography tool is a high-resolution direct-write pattern generator. As an allrounder, the DWL 66+ is ideal for research and development (R&D) in microelectronics, MEMS, microfluidics, sensors, non-standard substrates, advanced packaging — virtually any academic application that requires microstructure fabrication. The DWL 66+ stands out with its Grayscale Exposure Mode which creates complex 2.5D microstructures such as micro-optics for mobile applications, diffractive optical elements (DOE), computer-generated holograms, and structured surfaces.
It is a highly flexible and customizable system that precisely matches the requirements of your applications. Among the key features of the DWL 66+ are a high-resolution mode, front- and backside alignment, absolute position calibration and an automatic loading system.
Product Highlights :
Exposure Quality
CD uniformity 60 nm; edge roughness 50 nm; 2nd layer alignment 500 nm; autofocus compensation 80 µm
Grayscale Lithography
Up to 1000 gray levels; dedicated GenISys BEAMER software for optimizing the exposure of complex geometries
Versatility
Choice of 6 write modes with 2 laser wavelengths; 3 grayscale exposure regimes; highest amount of additional modules available including automation options
Available Modules :
6 Write Modes
Min. features from 300 nm to 4 µm
Exposure Wavelength
Diode laser at 375 nm or 405 nm
Autofocus
Air-gauge or optical autofocus for perfect exposure of small samples (less than 10 mm)
Variable substrate
Size from 3 mm to 230 mm
2 Grayscale Modes
Up to 1000 gray levels and a dedicated GenISys BEAMER software for optimizing the exposure of complex geometries
High-Accuracy Option
Various technical measures to improve the thermal stability and position accuracy of the stage’s coordinate system. Improved specifications for 2nd layer alignment: 350 nm
Automatic Loader
Handling of masks up to 7″ and substrates up to 8″. Optional second cassette station. Pre-aligner and wafer scanner available
Basic Freeform (BFF)
Exposures on non-planar substrates with features down to 3 μm. Typical applications are microstructures on top of convex or concave lenses
Vector Scan Mode
Patterns structures and shapes consisting of curved lines where smooth contours are required
Technical Data
| Write mode | HiRes | I | II | III | IV | V |
| Writing performance | ||||||
| Minimum Feature Size [μm] | 0.3 | 0.6 | 0.8 | 1 | 2 | 4 |
| Minimum Lines and Spaces [μm] | 0.5 | 0.8 | 1 | 1.5 | 3 | 5 |
| Address Grid [nm] | 5 | 10 | 25 | 50 | 100 | 200 |
| Edge Roughness [3σ, nm] | 50 | 50 | 70 | 80 | 110 | 160 |
| CD Uniformity [3σ, nm] | 60 | 70 | 80 | 130 | 250 | 400 |
| 2nd Layer Alignment over 5 x 5 mm² [nm] | 250 | 250 | 250 | 250 | 350 | 500 |
| 2nd Layer Alignment over 100 x 100 mm² [nm] | 500 | 500 | 500 | 500 | 800 | 1000 |
| Backside Alignment [nm] | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 |
| With Diode Laser (405 nm) | ||||||
| Write speed [mm²/min] | 3 | 13 | 40 | 150 | 600 | 2000 |
| Exposure Time for 100 x 100 mm² area [min] | 3000 | 740 | 255 | 72 | 20 | 7 |
| With UV Diode Laser (375 nm) | ||||||
| Write Speed [mm²/min] | 2 | 10 | 30 | 110 | - | - |
| Exposure Time for 100 x 100 mm² area [min] | 5000 | 1015 | 350 | 100 | - | - |
| System features | |
| Light Source | Diode laser with 405 nm or 375 nm |
| Substrate Sizes | Variable: 5 x 5 mm² to 9″ x 9″ | Customizable on request |
| Substrate Thickness | 0 to 12 mm |
| Maximum Exposure Area | 200 x 200 mm² |
| Temperature controlled Flow Box | Temperature stability ± 0.1°, ISO 4 environment |
| Real-Time Autofocus | Optical autofocus or air-gauge autofocus |
| Autofocus Compensation Range | 80 μm |
| Standard or Advanced Grayscale Mode | 128 / 256 gray levels respectively |
| Vector Mode | Enables the writing of stitching-free lines |
| Overview Camera | 8 x 10 mm² field of view facilitates alignment to marks and substrate navigation |
| Backside Alignment (optional) | Allows the alignment of exposures to structures on the backside of the substrate |
| Advanced Options - Performance Upgrades | |
| High-Accuracy Coordinate System | Includes golden plate calibration and climate monitoring: 2nd layer alignment down to 350 nm |
| Professional Grayscale Mode | 1024 gray levels, professional data conversion software |
| Automatic Loading System | Handling of masks up to 7" and wafers up to 8" with two carrier stations, pre-aligner and wafer scanner |
| System Dimensions of Standard Version | |
| Width × depth × height | 1300 mm × 1100 mm × 1950 mm (lithography unit only) |
| Weight | 1000 kg (lithography unit only) |
| Installation requirements | |
| Electrical | 230 VAC ± 5 %, 50/60 Hz, 16 A |
| Compressed air | 6 - 10 bar |